Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy
نویسندگان
چکیده
منابع مشابه
Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films
Voltage-modulated scanning force microscopy ~Piezoresponse microscopy! is applied to investigate the domain structure in epitaxial PbZr0.2Ti0.8O3 ferroelectric thin films grown on ~001! SrTiO3. By monitoring the vertical and lateral differential signals from the photodetector of the atomic force microscope it is possible to separate out and observe the out-of-plane and in-plane polarization vec...
متن کاملar X iv : c on d - m at / 0 40 13 33 19 J an 2 00 4 Coherent Ferroelectric Switching by Atomic Force Microscopy
General energy approaches have been applied to study the single-domain polarization reversal induced by the voltage-modulated Atomic Force Microscopy (AFM) in ferroelectric single crystals and thin films. Topographic analysis of energy surfaces in the subspace of domain dimensions is performed, and energy evolutions under an external bias are elucidated. This has let to successfully describe al...
متن کاملFerroelectric polarization reversal via successive ferroelastic transitions.
Switchable polarization makes ferroelectrics a critical component in memories, actuators and electro-optic devices, and potential candidates for nanoelectronics. Although many studies of ferroelectric switching have been undertaken, much remains to be understood about switching in complex domain structures and in devices. In this work, a combination of thin-film epitaxy, macro- and nanoscale pr...
متن کاملInfluence of Oxygen Pressure on the Domain Dynamics and Local Electrical Properties of BiFe0.95Mn0.05O3 Thin Films Studied by Piezoresponse Force Microscopy and Conductive Atomic Force Microscopy
In this work, we have studied the microstructures, nanodomains, polarization preservation behaviors, and electrical properties of BiFe0.95Mn0.05O₃ (BFMO) multiferroic thin films, which have been epitaxially created on the substrates of SrRuO₃, SrTiO₃, and TiN-buffered (001)-oriented Si at different oxygen pressures via piezoresponse force microscopy and conductive atomic force microscopy. We fo...
متن کاملAsymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy
Scanning force microscopy ~SFM! has been used to perform nanoscale studies of the switching behavior of Pb~Zr, Ti!O3 thin films via the direct observation of their domain structures. The study revealed a significant asymmetry of a switching pattern which is a function of the voltage polarity and original domain structure of individual grains. The phenomenon of asymmetric switching is attributed...
متن کامل